| 1. | Varactor diode parametric amplifier
变容二极管参量放大器
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| 2. | Analytic expression of capacitance characteristic of voltage - operated varactor
压控变容二极管电容特性的解析表达式
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| 3. | Varactor tuned oscillator
变容二极管党振荡器
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| 4. | Gaas varactor diode
砷化镓可变电抗二极管
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| 5. | Semiconductor discrete device . detail specification for gaas varactor diodes for 2ec600 series
半导体分立器件. 2ec600系列砷化镓变容二极管详细规范
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| 6. | Semiconductor discrete device . detail specification for silicon tuning varactor diode for type 2cc51e
半导体分立器件. 2cc51e型硅电调变容二极管详细规范
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| 7. | Utilizing the benefits of varactor and bowtie and fractal structures , some interesting characteristics of these elements were found
该结构单元为设计宽频带、动态方向图扫描的阵列反射天线奠定了基础。
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| 8. | 3 . a 4 . 2ghz vco tuned by an accumulation - mode mos varactor in tsmc 0 . 35 m sige bicmos process is obtained after debugging with the simulator spectrerf
3 .基于tsmc的0 . 35微米锗硅bicmos工艺,采用spectrerf仿真器进行压控振荡器的调试和仿真。
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| 9. | While simulating the resonant circuits , we finished a microstrip resonance , which has high q - factor and fits to design w - band low phase noise oscillators . select beam lead hyperabrupt junction varactor and gunn die made in china as vco ’ s frequency turning component and minus resistance
此外,文中还对w频段微带结构直流偏置网络、微带波导过渡等外围电路进行了仿真优化,设计方法和结论对毫米波微带电路设计具有通用的参考价值。
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| 10. | On account of the low q - factor and small tuning range of the p - n junction varactor , the inversion - mode mos varactor is used in the lc voltage controlled oscillator in this thesis . the simulation results show that the designed lc voltage controlled oscillator has 15 % tuning range
3 .由于lc压控振荡器中的pn结变容管品质因数低、调谐范围小,本次设计的lc压控振荡器采用了强反型mos变容管,仿真结果表明,所设计的lc压控振荡器具有15 %调谐范围。
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